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<p class="MsoNormal">Good Afternoon,<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">The Condensed Matter Experiment Seminar Series is pleased to host Professor
<a href="https://www.cems.umn.edu/people/faculty/chris-leighton">Chris Leighton</a><a href="http://physics.ucdavis.edu/people/faculty/inna-vishik"></a> from the University of Minnesota on Thursday, January 12<sup>th</sup> in 1080 Smith Seminar, PRB. Learn more
about Dr. Leighton’s seminar topic " Electrolyte Gating of Perovskite Oxide Ferromagnets and Semiconductors" below. Thank you and we look forward to seeing you there!<o:p></o:p></p>
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<p class="MsoNormal"><u>Abstract<o:p></o:p></u></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">Recently, electrolyte gating techniques employing ionic liquids have proven remarkably effective in tuning large carrier densities
at the surface of a wide variety of materials. These include organic conductors, conventional semiconductors, 2D materials, binary oxides, and transition metal oxides, as well as perovskites and other complex oxides. In essence these electrolytes enable electric
double layer transistor operation, the very large specific capacitances (10’s of F/cm2) generating electron/hole densities up to 1014 - 1015 cm-2, i.e., significant fractions of an electron/hole per unit cell in most materials. Notable successes include discovery
of superconductivity in KTaO3, tuning over a dome of superconductivity in MoS2 and YBa2Cu3O7-, and electrical control of the insulator-metal transition in VO2, although many questions remain. Uncertainties include the true doping mechanism (i.e., purely electrostatic
vs. electrochemical (e.g., redox) based), the relation between 2D surface and bulk chemical doping, the role of electrostatic disorder, and the universality of the approach. In this seminar I will review the application of electrolyte gating using not ionic
liquids, but primarily ionic gels (or ion gels), which enable simple processing of all-solid-state devices. After a brief illustration of the power of the technique using polymer semiconductors [1], single crystal small molecule semiconductors [2], and In2O3
[3], I will discuss application to the perovskite oxide ferromagnet La1-xSrxCoO3 (LSCO) [4,5] and the high room temperature mobility perovskite semiconductor BaSnO3 (BSO) [6]. In LSCO the findings significantly clarify the issue of charge carrier vs. oxygen
defect creation, illustrate gate-control of magnetization, Curie temperature, and magnetoresistance, and suggest gate-induced cluster percolation [7]. In BSO our data indicate reversible electrostatic control of charge carrier density over an unprecedented
gate bias window, leading to wide-range control over semiconducting transport. These results highlight the extraordinary utility of electrolytes for control of materials functionality.
<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">Work performed in collaboration with: J. Walter, H. Wang, W. Xie, S. Wang, B. Luo, P. Orth, B. Yu, G. Yu, X. Zhang, M.-J. Ha, M.
Manno, B. Jalan, C.D. Frisbie, M. Greven, R. Fernandes and B. Shklovskii. Work supported primarily by the University of Minnesota NSF MRSEC.<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">[1] S. Wang, M.-J. Ha, M. Manno, C.D. Frisbie and C. Leighton, Nat. Commun. 3, 1210 (2012).<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">[2] W. Xie, S. Wang, X. Zhang, C. Leighton and C.D. Frisbie, Phys. Rev. Lett. 113, 246602 (2014).<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">[3] W. Xie, X. Zhang, C. Leighton and C.D. Frisbie, in press, Adv. Electron. Mater. (2016).<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">[4] J. Walter, H. Wang, B. Luo and C. Leighton, ACS Nano 10, 7799 (2016).<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">[5] J. Walter, B. Yu, G. Yu, M. Greven and C. Leighton, in preparation (2017).<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">[6] H. Wang, K. Ganguly, J. Walter, B. Jalan and C. Leighton, in preparation (2017).<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif"">[7] P. Orth, R. Fernandes, J. Walter, C. Leighton and B. Shklovskii, under review (2017).<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:10.0pt;font-family:"Arial","sans-serif";color:#333333">Sincerely,<br>
Joanna<o:p></o:p></span></p>
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<p class="MsoNormal" style="line-height:13.5pt;background:white"><span style="font-size:9.0pt;font-family:"Arial","sans-serif";color:#333333"><img border="0" width="224" height="45" id="_x0000_i1025" src="http://osu.edu/assets/site/images/logos/osu-emailsig.png" alt="The Ohio State University"><br>
</span><b><span style="font-size:10.0pt;font-family:"Arial","sans-serif";color:#BB0000;background:white">Joanna Gardner</span></b><span style="font-size:10.0pt;font-family:"Arial","sans-serif";color:#333333"><br>
Program Coordinator<br>
</span><span style="font-size:10.0pt;font-family:"Arial","sans-serif";color:#BB0000;background:white">College of Arts and Sciences</span><span style="font-size:10.0pt;font-family:"Arial","sans-serif";color:#333333"> Physics<br>
2021 Physics Research Building, 191 W Woodruff Avenue, Columbus, OH 43210<br>
614-292-3437 Office<br>
<a href="mailto:gardner.306@osu.edu"><span style="background:white">gardner.306@osu.edu</span></a>
<a href="http://osu.edu"><span style="background:white">osu.edu</span></a> <o:p></o:p></span></p>
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